Product Summary

The BLF177 is a HF/VHF power MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange.

Parametrics

Absolute maximum ratings: (1)VDS, drain-source voltage: 125 V max; (2)VGS, gate-source voltage: ±20 V max; (3)ID, drain current (DC): 16 A max; (4)Ptot, total power dissipation: 220 W max at Tmb ≤ 25 ℃; (5)Tstg, storage temperature: -65 +150 ℃; (6)Tj, junction temperature: - 200 ℃ max.

Features

Features: (1)High power gain; (2)Low intermodulation distortion; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLF177
BLF177

Advanced Semiconductor, Inc.

Transistors RF MOSFET Power RF Transistor

Data Sheet

0-15: $42.00
15-25: $37.80
25-50: $33.60
50-100: $30.24
BLF177,112
BLF177,112

NXP Semiconductors

Transistors RF MOSFET Power RF DMOS 150W HF-VHF

Data Sheet

0-1: $39.63
1-25: $36.98
25-100: $34.33
BLF177C
BLF177C

NXP Semiconductors

Transistors RF MOSFET Power VDMOS TNS

Data Sheet

Negotiable 
BLF177C,112
BLF177C,112

NXP Semiconductors

Transistors RF MOSFET Power VDMOS TNS

Data Sheet

Negotiable 
BLF177CR
BLF177CR

NXP Semiconductors

Transistors RF MOSFET Power VDMOS TNS

Data Sheet

Negotiable 
BLF177CR,112
BLF177CR,112

NXP Semiconductors

Transistors RF MOSFET Power VDMOS TNS

Data Sheet

Negotiable